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論文中文名稱:六方晶鈦酸鋇薄膜之製備及其微波介電性質研究 [以論文名稱查詢館藏系統]
論文英文名稱:Fabrication and Microwave Dielectric Properties of hexagonal Doped-BaTiO3 Thin Films [以論文名稱查詢館藏系統]
院校名稱:臺北科技大學
學院名稱:工程學院
系所名稱:材料及資源工程系研究所
畢業學年度:98
出版年度:99
中文姓名:程竟端
英文姓名:Ching-Tuan Cheng
研究生學號:97788033
學位類別:碩士
語文別:中文
口試日期:2010-07-07
論文頁數:67
指導教授中文名:王錫福;徐永富
口試委員中文名:朱瑾;呂福興
中文關鍵詞:鈦酸鋇六方晶微波介電特性介質共振器介電常數漏電流
英文關鍵詞:BaTiO3HexagonalMicrowave dielectric propertiesDielectric resonatorDielectric constantLeakage current
論文中文摘要:有鑑於目前通訊市場及無線數據傳輸之普及率增加,微波介電材料之需求也相對增加。鈦酸鋇陶瓷基薄膜在DRAM以及電激發光元件薄膜及許多介電材料上已有應用,在過去研究中,主要著重於正方晶鈦酸鋇,對於在高溫相才能穩定之六方晶鈦酸鋇鮮少出現在文獻中,且相較於塊材,薄膜之探討更為稀少。
本研究是利用射頻磁控濺鍍法製備六方晶鈦酸鋇薄膜。將鈦酸鋇粉末摻雜少量氧化鈷(Co3O4)或氧化錳(Mn3O4),經過固態合成法製作靶材,在有氧及無氧的氣氛下,將薄膜沉積於矽基板、氧化鋁基板、sapphire基板及Pt/Ti/SiO2/Si基板上,形成非晶相薄膜,經由還原氣氛下(7% H2+93% Ar)退火處理,得到鈦酸鋇薄膜。並利用分離式柱狀介質共振(SPDR)及半導體元件分析儀測量其於高頻及低頻時之微波介電性質。發現在Ar/O2 = 20/0濺鍍氣氛下沉積的Ba(Ti0.85Co0.15)O3薄膜具有最佳之介電常數,εr= 66、tan δ= 0.04,而六方晶鈦酸鋇薄膜的形成與靶材、基板、與退火氣氛有關,摻雜之元素可產生越多氧空缺,與薄膜結構越接近之基板,及還原氣氛下均有助於六方晶鈦酸鋇薄膜生成。
論文英文摘要:The applications of dielectric material (Barium Titanate ceramics) have been widely used in FRAM, SAW, and capacitor because of several unique properties such as ferroelectricity, piezoelectricity and high dielectric constant. However, most of researchers have focused on the properties and characteristics of tetragonal barium titanate in bulk and thin film forms. Few researches have been found in hexagonal barium titanate stabilized in higher temperature (>1460) for bulk form.
The hexagonal barium titanate thin films were successfully fabricated by using rf magnetron sputtering in this study. The dopant targets (Co3O4 and Mn3O4) with hexagonal crystal structure were fabricated by solid sate reaction process and the corresponding thin films were deposited on various substrates (Si, Sapphire, Alumina and Pt/Ti/SiO2/Si) with different deposition parameters. The XRD results exhibit the amorphous state for as-deposited thin films, which become hexagonal crystal structure after annealing process at 750oC and above in forming atmosphere (7% H2+93% Ar) for 30 min. The microwave properties for low frequency and high frequency were explored by using Split Pose Dielectric Resonator (SPDR) and Semiconductor Device Analyzer, respectively. The Co-doped BaTiO3 films deposited in Ar atmosphere show that best dielectric properties (εr= 66, tan δ= 0.04) and the formations of hexagonal crystal structure have significant dependences on target, substrate, and annealing atmosphere.
論文目次:摘要 i
ABSTRACT ii
誌謝 iv
目錄 v
表目錄 vii
圖目錄 viii
第一章 緒論 1
1.1 前言 1
1.2 研究目的 2
第二章 文獻回顧與理論基礎 3
2.1 文獻回顧 3
2.2 鈣鈦礦結構(Perovskite Structure) 10
2.3 鈦酸鋇之結構與性質 12
2.4 濺鍍法(sputtering) 15
2.5 微波介電特性及原理 21
2.5.1 介電常數(er) 23
2.5.2 品質因子(Q) 26
2.5.3 共振頻率溫度係數(tf) 27
第三章 實驗方法 28
3.1 實驗材料 28
3.1.1 實驗配方(靶材) 28
3.1.2 靶材製備 28
3.1.3 基板前處理與製備 30
3.2 實驗條件與參數 33
3.2.1 薄膜濺鍍參數 33
3.2.2 上電極濺鍍參數 34
3.3 製程設備與分析儀器規格 35
3.3.1 射頻磁控濺鍍機(RF Magnetron Sputtering) 35
3.3.2 X光繞射儀(XRD)/ X光粉末繞射儀(XRPD) 36
3.3.3 掃描式電子顯微鏡(FE-SEM) 36
3.3.4 雷射粒徑分析儀(Laser Diffraction Particle Size Analyzer) 37
3.3.5 快速退火爐 (RTA) 38
3.3.6 電子微探儀(EPMA) 38
3.3.7 分離式柱狀介質共振器(SPDR)-高頻(9.7 GHz) 38
3.3.8 半導體元件分析儀(Semiconductor Device Analyzer)-低頻(1 MHz) 42
第四章 結果與討論 43
4.1 起始粉末與靶材之物理性質分析 43
4.1.1 起始粉末之性質分析(BaCO3、TiO2、Mn3O4、Co3O4) 43
4.1.2 靶材之性質分析 46
4.2 影響六方晶鋇酸鋇薄膜形成因素 48
4.2.1 靶材及濺鍍氣氛對六方晶鈦酸鋇形成之影響 49
4.2.2 基板對六方晶鈦酸鋇形成之影響 52
4.2.3 退火氣氛對六方晶鈦酸鋇形成之影響 54
4.3 六方晶鈦酸鋇薄膜之微波介電特性 56
4.3.1 六方晶鈦酸鋇薄膜之介電常數及介電損耗 57
4.3.2 六方晶鈦酸鋇薄膜之漏電流密度 61
第五章 結論 64
參考文獻 65
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