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主要題名:Structural characteristics of zinc oxide films treated in N2 atmosphere using microwave plasma jet sintering system
作者姓名:Su, Chun-HsiHuang, Chia-Min
中文關鍵詞:microwave plasmaN2sinteringzinc oxide
摘要:Microwave plasma techniques offered many advantages over conventional fabricating
methods. However, few studies have used microwave plasma energy to sinter traditional
ceramics. Thus, the aim of this work is microwave plasma Jet sintering system (MPJSS) and
simulate analyze the electric field of ZnO films on Si (100) substrates. Ansoft HFSS consists
of MPJSS modules for the calculation of ZnO films electromagnetic field. Sinter of ZnO
films occurs at approximately N2 with a 10 sccm gas flow rate for a process pressure of 35
Torr and several power of 300W, 600W, 900W and 1200W applied power. Optical emission
spectroscopic (OES) studies of N2 microwave plasmas, X-ray diffraction (XRD),
Micro-Raman, and FESEM spectrometry were used to characterize the produced ZnO films.
The results of XRD and Micro-Raman showed that the synthesized ZnO films had a high
crystalline wurzite structure. The Zn2SiO4 peaks reveal an increase of the crystals dimensions
with the increase of the E-field. Intensity of diffraction peak of ZnO films increases with
increasing microwave powers in MPJSS.
貢獻者資料:機電學院/機電科技研究所
論文ID:11129-en-pc-2010-11_1p
典藏單位:國立臺北科技大學
數位物件檔名:11129-en-pc-2010-11_1p.pdf
發行日期:2010-11
資料開放狀態:開放
研討會:24th International Microprocesses and Nanotechnology Conference, 9-12 Nov. 2010, Fukuoka, Japan