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主要題名:High efficiency CMOS class E power amplifier for bluetooth
作者姓名:Huang, Jung-TangTsou, Chia-HsinCheng, Ming-Li
摘要:A power amplifier for wireless application has been
implemented in a standard 0.25-um CMOS technology. The
power amplifier employs class-E topology to exploit its
soft-switching property for high efficiency [1]. The dc-feed
inductance in the class-E load network allows the load
resistance to be larger for the same output power than RF
choke. The input waveform of class-E power amplifier is
generated by driver stage of class-F to turn the power
transistor on and off. By employing these design techniques,
the simulated results shows that the power amplifier can
deliver 21dbm output power to 50-Ω load at 2.4GHz for
Bluetooth with 47% power-added efficiency(PAE) from a
2.5-V supply without stressing the active devices.
貢獻者資料:機電學院/自動化科技研究所
論文ID:10623-me-pc-2003-11_1p
典藏單位:國立臺北科技大學
數位物件檔名:10623-me-pc-2003-11_1p.pdf
發行日期:2003-11
資料開放狀態:開放
研討會:2003 EDMS, 13-16 Nov. 2003, Taiwan