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論文中文名稱:以斜向沉積技術研製二分之一波板 [以論文名稱查詢館藏系統]
論文英文名稱:Using oblique angle deposition to fabricate half wave-plate [以論文名稱查詢館藏系統]
院校名稱:臺北科技大學
學院名稱:電資學院
系所名稱:光電工程系研究所
畢業學年度:103
畢業學期:第二學期
中文姓名:曾建豪
英文姓名:Chien-Hao Tseng
研究生學號:102658030
學位類別:碩士
語文別:中文
口試日期:2015/07/08
指導教授中文名:任貽均
指導教授英文名:Yi-Jun Jen
口試委員中文名:任貽均;李正中;嚴大任;林宗賢
中文關鍵詞:二分之一波板雙折射性質偏極轉換全反射非均向薄膜
英文關鍵詞:half waveplatebirefringenttotal reflectionpolarization conversion
論文中文摘要:本實驗的第一部分,針對正向入射,以交錯沉積的方式製作具雙折射特性的五氧化二鉭(Ta2O5)與 氧化銦錫(Indium Tin Oxide, ITO)薄膜。利用改變Ta2O5與ITO薄膜,嘗試使其展現反射式二分之一波板的行為,交錯次沉積週期從3.9 nm至17.1 nm來改變其雙折射性質。並也探討熱退火對ITO薄膜的雙折射性質影響。
二分之一波板運用在全反射情況下已有相關的研究:最佳偏極轉換效果發生在入射角度超過臨界角度時。利用斜向沉積技術,將單一雙折射性質的薄膜沉積在右直角稜鏡上,做為一個(稜鏡/薄膜/空氣)的系統用以來達到最佳偏極轉換效果。在本研究的第二部分,將雙折射性質的Ta2O5薄膜設計在固定入射角度為45度的狀況下並製鍍。藉由調控薄膜的厚度、主軸折射率與柱狀傾角可以達到強烈的偏極轉換效率,且此偏極轉換具有接近消色差效果。將設計出來的波板製鍍在右直角稜鏡上,並與分光鏡結合,可做為一個在準直光的情況下具有低偏極損耗效果的系統。
論文英文摘要:In order to perform as a half waveplate for normal incidence, birefringent Ta2O5 and Indium Tin Oxide (ITO) thin films were grown using bideposition. The pitch length of the bideposited Ta2O5 and ITO thin films are varied their periods from 3.9 nm to 17.1 nm to change the birefringence. The annealing effect with ITO thin films on the birefringence is also investigated.
A half-wave plate has been developed to work under total reflection: at a certain angle of incidence over the critical angle a strong polarization conversion occurs. A single birefringent thin film can be obliquely deposited on a prism as a (prism/film/air) system to reach this phenomenon. In the second part of this work, birefringent Ta2O5 thin films is designed and fabricated for an angle of incidence of 45 deg. Thickness, principal indexes and orientation of principal axes are tuned to reach strong polarization conversion. The polarization conversion is approached to be achromatic. A waveplate coated right-angle prism can be combined with a beam splitter to form a lossless polarization for a collimated light source.
論文目次:目錄

中文摘要 i
英文摘要 ii
誌謝 iii
目錄 iv
表目錄 vi
圖目錄 vii
第一章 緒論 1
1.1 前言 1
1.2 文獻回顧 1
1.2.1非均向性光學薄膜 1
1.2.2氧化銦錫材料特性與薄膜 7
1.2.3斜柱陣列薄膜的理論分析介紹 9
1.3 垂直入射波板 11
1.4 斜向入射波板 14
1.4.1非均向性介質薄膜的偏極轉換現象 14
1.4.2全反射式波板 15
1.5 研究動機 18
第二章 原理 20
2.1三維空間 20
2.1.1空間座標與主軸座標 20
2.1.2空間座標與主軸座標的轉換關係 21
2.2 Fresnel’s方程式 22
2.3非均向薄膜中傳遞的特徵電磁場 24
2.4偏極轉換成因的分析方法 28
第三章 實驗與量測系統 33
3.1蒸鍍系統 33
3.2蒸鍍流程 33
3.3光譜量測系統 34
3.4反射式角頻譜 35
3.4.1單波長反射式角頻譜 35
3.4.2偏極轉換的量測方法 36
3.5橢圓偏光儀量測 37
3.5.1橢圓偏光術與量測 37
3.5.2橢圓偏光術的資料分析 38
第四章 實驗結果分析與成因討論 39
4.1單層交錯沉積柱狀薄膜式波板 39
4.1.1單層氧化銦錫的斜向柱狀結構之製鍍與光學量測 39
4.1.2單層交錯沉積氧化銦錫薄膜的結構之製鍍與光學量測 43
4.1.3以單層交錯沉積氧化銦錫薄膜製鍍反射式二分之一波板 46
4.1.4單層五氧化二鉭的斜向柱狀結構之製鍍與光學量測 50
4.1.5單層交錯沉積五氧化二鉭薄膜的結構之製鍍與光學量測 53
4.1.6以單層交錯沉積五氧化二鉭製鍍反射式二分之一波板 58
4.2全反射式二分之一波板 60
4.2.1單層五氧化二鉭的斜向柱狀結構之製鍍與光學參數量測 60
4.2.2嘗試特定角度入射之全反射式二分之一波板參數調製 65
4.2.3全反射式二分之一波板之偏極轉換成因探討 74
4.2.4 45o入射設計全反射式二分之一波板之製鍍 85
4.2.5 45o入射設計全反射式二分之一波板之應用 86
4.3各式二分之一波板之比較 87
第五章 結論 90
參考文獻 91
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