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論文中文名稱:非均向性光學薄膜之偏極轉換成因 [以論文名稱查詢館藏系統]
論文英文名稱:Investigation of polarization conversion from an anisotropic thin film [以論文名稱查詢館藏系統]
院校名稱:臺北科技大學
學院名稱:電資學院
系所名稱:光電工程系研究所
畢業學年度:98
出版年度:99
中文姓名:蔡文堡
英文姓名:Wen-Pao Tsai
研究生學號:97658023
學位類別:碩士
語文別:中文
口試日期:2010-07-23
論文頁數:51
指導教授中文名:任貽均
指導教授英文名:Yi-Jun Jen
口試委員中文名:藍永強;張淑美;周趙遠鳳
中文關鍵詞:偏極轉換非均向性薄膜光學特性Berreman運算法界面係數
英文關鍵詞:polarization conversionanisotropic thin filmoptical characteristicsBerreman calculusinterface coefficient
論文中文摘要:本論文運用Berreman矩陣運算法來描述光在雙折射材料中的傳播行為,並藉由此運算法來探討偏極轉換現象在非均向薄膜中形成的原因。
在稜鏡耦合組態(稜鏡〺非均向薄膜〺空氣)這種可增強偏極轉換的系統下,利用Berreman矩陣運算法逐步分析在(均向〺晶體)界面、(晶體〺均向)界面的反射及透射係數以及在非均向薄膜中的尋常光與非尋常光,觀察以上的透射率、透射係數相位變化來判別在不同材料、入射角以及改變沉積平面夾角時的偏極轉換主要成因。
實際上代入(稜鏡〺低折射率非均向薄膜(二氧化矽)〺空氣)討論,在偏極轉換率較高的入射角度以及偏極轉換率較低的入射角度進行偏極轉換成因的對照,然後再替換成高折射率非均向薄膜(二氧化鈦)進行討論。
論文英文摘要:In this work, we describe the propagation behavior of wave in the birefringence material by Berreman calculus, and use it to confer what the reason to form the phenomenon of polarization conversion in the anisotropic thin film.
The polarization conversion reflection (PCR) can be enhanced in the prism-coupling configuration (prism〺anisotropic thin film〺air). We use the Berreman calculus to gradually analysis the reflection coefficient, transmit coefficient and the distribution of electric- magnetic field at isotropic-crystal interface and crystal-isotropic interface, then watch out for the e-ray and o-ray in the anisotropic thin film. To observe above-mentioned variation of intensity and phase, we can differentiate what is the main factor about polarization conversion。
Reality, we substitute low refractive (SiO2) anisotropic thin film to consider taking a contrast for the cause of polarization that conversion between the incident angle of higher polarization conversion reflection and the lower one. And then, we substituted for high refractive (TiO2) anisotropic thin film once again。
論文目次:中文摘要 i
英文摘要 ii
誌謝 iii
目錄 iv
表目錄 v
圖目錄 vi
第一章 緒論 1
1.1 前言 1
1.2 非均向性光學薄膜 2
1.3 非均向性介質的偏極轉換現象 4
1.4 實驗目的 6
第二章 非均向性薄膜理論分析 7
2.1 空間軸與主軸之定義及轉換 7
2.2 Fresnel’s方程式 9
2.3 材料中傳遞的特徵電磁場 10
2.4 薄膜矩陣法 12
2.5 界面與界面係數之計算 19
2.6 界面上的電磁場分佈 22
2.6.1 界面的電磁場分佈計算 22
2.6.2 以P偏振光入射上界面後,到達下界面的電磁場分佈 24
第三章 實驗 26
3.1 穿透光譜量測系統 26
3.2 反射率角頻譜量測系統 27
3.3 製鍍系統 28
3.4 儀器校正 29
3.4.1 穿透式光譜儀校正程序 29
3.4.2 單波長反射式角頻譜系統校正程序 29
3.5實驗製鍍與樣品分析 31
3.5.1 樣品一 單層低折射率(二氧化矽)非均向性薄膜 31
3.5.2 樣品二 單層高折射率(二氧化鈦)非均向性薄膜 33
第四章 實驗結果分析與成因討論 35
4.1 單層低折射率(二氧化矽)非均向性薄膜 35
4.1.1 不同入射角之透(反)射係數與透(反)射率 35

4.1.2 不同入射角之偏極轉換成因討論與比較 38
4.1.3 不同沉積平面夾角之偏極轉換成因討論與比較 42
4.2 單層高折射率(二氧化鈦)非均向性薄膜 44
4.2.1 不同入射角之透(反)射係數與透(反)射率 44
4.2.2 不同入射角之偏極轉換成因討論與比較 47
第五章 結論 49
參考文獻 50
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論文全文使用權限:同意授權於2012-08-24起公開